Qiwei Xu, I. Teng Cheong, Hanfa Song, Vien Van, Jonathan G. C. Veinot, and Xihua Wang
ACS Photonics 2022, 9, 8, 2792–2801
doi/pdf/10.1021/acsphotonics.2c00587
Integrating lead sulfide (PbS) colloidal quantum dots (CQDs) with crystalline silicon (c-Si) has been proven to be an effective strategy in extending the sensitivity of Si-based photodetectors into infrared regime. Here, the research team demonstrate the successful integration of PbS CQD inks with Si and construct a highly efficient heterojunction infrared photodiode operating in the range from 800 up to 1500 nm.
Summary points:
∙PbS CQD on Si to increase sensitivity of Si to IR
∙CQD:Si photodetector operating from 800 to 1500 nm
∙Layer of p-type QD enhances built-in electric field
∙EQE of 44% at 1280nm and 2V reverse bias - stable for more than 600 h
∙Photoresponse lower than 4μs without tails indicate low trap density
Lead sulfide (PbS) colloidal quantum dots (CQD) enable Si photodector sensitivity in the near infrared (NIR) in the range from 800 to 1500 nm.
The group of Xihua Wang at the University of Alberta achieved this result by spin-coating PbS CQD to form a CQD:Si heterojunction photodetector. The addition of a p-type CQD buffer layer at the CQD:Si interface enhanced the built-in electric field and improved the charge extraction. With transient photocurrent (TPC) and photovoltage (TPV) they measured a photoresponse lower than 4μs demonstrating low trap density at the CQD:Si interface.
TPC and TPV measurements were possible thanks to the all-in-one characterization platform PAIOS from Fluxim AG.